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| FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT May 2007 FGB3040CS EcoSPARKTM 300mJ, General Description The FGB3040CS is an lgnition IGBT that offers outstanding SCIS capability along with a ratiometric emitter current sensing capability. This sensing is based on a emitter active area ratio of 200:1. The output is provided through a fourth (sense) lead. This signal provides a current level that is proportional to the main collector to emitter current. The effective ratio as measured on the sense lead is a function of the sense output, the collector current and the gate to emitter drive voltage. REE I DF tm 400V, N-Channel Current Sensing Ignition IGBT Applications Smart Automotive lgnition Coil Driver Circuits ECU Based Systems Distributorless Based Systems Coil on Plug Based Systems Features SCIS Energy = 300mJ at TJ = 25oC Logic Level Gate Drive LE A Package Device Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 2mA) BVECS ESCIS25 IC25 IC110 VGEM PD TJ TSTG TL TPKG ESD Emitter to Collector Breakdown Voltage (IC = 1mA) (Reverse Battery Condition) Self Clamping Inductive Switching Energy (at starting TJ = 25C) Continuous Collector Current, at VGE = 4.0V, TC = 25C Continuous Collector Current, at VGE = 4.0V, TC = 110C Maximum Continuous Gate to Emitter Voltage Power Dissipation, at TC = 25C Power Dissipation Derating, for TC > 25oC Ratings 430 24 300 170 21 19 10 150 1 -40 to 175 -40 to 175 300 260 4 Units V V mJ mJ A A V W W/oC o ESCIS150 Self Clamping Inductive Switching Energy (at starting TJ = 150C) Operating Junction Temperature Range Storage Junction Temperature Range Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec) Max. Package Temp. for Soldering (Package Body for 10 sec) Electrostatic Discharge Voltage, HBM model (100pfd, 1500 ohms) @2007 Fairchild Semiconductor Corporation FGB3040CS Rev. A M ENTATIO LE N MP Symbol C oC oC oC kV 1 www.fairchildsemi.com FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT Package Marking and Ordering Information Device Marking 3040CS 3040CS Device FGB3040CS FGB3040CS Package TO-263 6 Lead TO-263 6 Lead Reel Size 300mm Tube Tape Width 24mm N/A Quantity 800 50 Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER ICE = 2mA, VGE = 0, Collector to Emitter Breakdown Voltage RGE = 1K, See Fig. 17 TJ = -40 to 150oC ICE = 10mA, VGE = 0V Collector to Emitter Breakdown Voltage RGE = 0, See Fig. 17 TJ = -40 to 150oC Emitter to Collector Breakdown Voltage Gate to Emitter Breakdown Voltage Gate to Emitter Leakage Current Collector to Emitter Leakage Current Emitter to Collector Leakage Current Series Gate Resistance ICE = -75mA, VGE = 0V, TC = 25C IGES = 2mA VGE = 10V VCES = 250V, See Fig. 13 VEC = 24V, See Fig. 13 TC = 25oC 370 410 430 V BVCES BVECS BVGES IGEO ICES IECS R1 390 30 12 TC = 150oC TC = 25oC TC = 150oC 430 14 100 450 9 25 1 1 40 - V V V A A mA mA On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V ICE(ON) Collector to Emitter On State Current VCE = 5V, VGE = 5V TC = 25oC See Fig. 5 TC = 150oC See Fig. 6 TC = 150 C o - 1.3 1.6 1.8 37 1.6 1.85 2.35 - V V V A Dynamic Characteristics QG(ON) VGE(TH) VGEP AREA 5 20 Gate Charge Gate to Emitter Threshold Voltage Gate to Emitter Plateau Voltage Emitter Sense Area Ratio Emitter Current Sense Ratio Emitter Current Sense Ratio ICE = 10A, VCE = 12V, VGE = 5V, See Fig. 16 ICE = 1mA, VCE = VGE See Fig. 12 ICE = 10A, VCE = 12V Sense Area/Total Area ICE = 8.0A, VGE = 5V, RSENSE = 5 ICE = 9.0A, VGE = 5V, RSENSE = 20 TC = 25oC 1.3 0.75 550 TC = 150oC 15 1.6 1.1 3.0 1/200 230 640 2.2 1.8 765 nC V V - Switching Characteristics td(ON)R trR Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1 VGE = 5V, RG = 1K Current Rise Time-Resistive TJ = 25C, See Fig. 14 0.6 1.5 4.7 2.6 4 7 15 15 300 s s s s mJ td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, L = 500Hy, VGE = 5V, RG = 1K tfL Current Fall Time-Inductive TJ = 25C, See Fig. 14 SCIS Self Clamped inductive Switching TJ = 25C, L = 3.0mHy, ICE = 14.2A, RG = 1k , VGE = 5V, See Fig. 3&4 Thermal Characteristics RJC Thermal Resistance Junction to Case All Packages 2 - - 1.0 oC/W FGB3040CS Rev. A www.fairchildsemi.com FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT Typical Performance Curves VSENSE, EMITTER SENSE VOLTAGE (mV) VSENSE, Emitter Sense Voltage (V) 0.6 ICE = 18A VGE = 5V, TJ = 25 C o 400 0.5 0.4 0.3 0.2 0.1 0.0 ICE = 15A ICE = 10A ICE = 8A ICE = 5A ICE = 3A ICE = 1A ICE = 0.5A VGE = 5V, RSENSE = 5 ohms, TJ = 25 C o 300 200 100 1 10 100 1000 RSENSE, Emitter Sense Resistance (ohms) 0 0 2 4 6 8 10 12 14 16 18 20 ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 1. Emitter Sense Voltage vs. Emitter Sense Resistance ISCIS, INDUCTIVE SWITCHING CURRENT (A) Figure 2. Emitter Sense Voltage vs. Collector to Emitter Current ISCIS, INDUCTIVE SWITCHING CURRENT (A) 35 30 25 20 15 10 5 0 TJ = 150 C o RG = 1K, VGE = 5V, VCE = 14V 35 30 25 20 15 10 5 0 TJ = 150 C o RG = 1K, VGE = 5V, VCE = 14V TJ = 25 C o TJ = 25 C o SCIS Curves valid for Vclamp Voltages of <430V SCIS Curves valid for Vclamp Voltages of <430V 0 25 50 75 100 125 150 tCLP, TIME IN CLAMP (S) 175 200 0 2 4 6 L, INDUCTANCE (mHy) 8 10 Figure 3. Self Clamped Inductive Switching Current vs. Time in Clamp VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 4. Self Clamped Inductive Switching Current vs. Inductance VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.36 1.32 1.28 1.24 1.20 VGE = 8V VGE = 5V VGE = 3.7V VGE = 4.0V ICE = 6A 1.8 1.7 1.6 1.5 1.4 VGE = 3.7V VGE = 4.0V ICE = 10A VGE = 4.5V VGE = 4.5V 1.16 1.12 -75 -50 -25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERTURE ( C) 1.3 VGE = 5V VGE = 8V 1.2 -75 -50 -25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERTURE ( C) Figure 5. Collector to Emitter On-State Voltage vs. Junction Temperature Figure 6. Collector to Emitter On-State Voltage vs. Junction Temperature FGB3040CS Rev. A 3 www.fairchildsemi.com FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) 40 (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 8.0V VGE = 5.0V VGE = 4.5V 30 VGE = 4.0V VGE = 3.7V 40 VGE = 8.0V VGE = 5.0V VGE = 4.5V 30 VGE = 4.0V VGE = 3.7V 20 20 10 TJ = -40 C o 10 TJ = 25 C o 0 0 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 0 0 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 7. Collector to Emitter On-State Voltage vs. Collector Current ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 8. Collector to Emitter On-State Voltage vs. Collector Current ICE, COLLECTOR TO EMITTER CURRENT (A) 40 40 VGE = 8.0V VGE = 5.0V VGE = 4.5V 30 VGE = 4.0V VGE = 3.7V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VCE = 5V TJ = -40oC TJ = 25oC TJ = 175oC 30 20 20 10 TJ = 175 C o 10 0 0 0 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 0 1 2 3 4 5 VGE, GATE TO EMITTER VOLTAGE (V) 6 Figure 9. Collector to Emitter On-State Voltage vs. Collector Current 25 20 15 10 5 0 25 Figure 10. Transfer Characteristics ICE, DC COLLECTOR CURRENT (A) VTH, THRESHOLD VOLTAGE (V) VGE = 4.0V 2.0 VCE = VGE 1.8 1.6 1.4 1.2 1.0 0.8 -50 ICE = 1mA 50 75 100 125 150 o TC, CASE TEMPERATURE( C) 175 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE(oC) Figure 11. DC Collector Current vs. Case Temperature Figure 12. Threshold Voltage vs. Junction Temperature FGB3040CS Rev. A 4 www.fairchildsemi.com FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT Typical Performance Curves 10000 VECS = 24V (Continued) 12 ICE = 6.5A, VGE = 5V, RG = 1K LEAKAGE CURRENT (A) 1000 100 10 1 0.1 -50 SWITCHING TIME (S) 10 8 6 4 2 0 25 Resistive tOFF Inductive tOFF VCES = 300V VCES = 250V Resistive tON -25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERATURE ( C) 50 75 100 125 150 o TJ, JUNCTION TEMPERATURE ( C) 175 Figure 13. Leakage Current vs. Junction Temperature VGS, GATE TO EMITTER VOLTAGE(V) Figure 14. Switching Time vs. Junction Temperature 10 8 6 VCE = 12V 4 2 0 2000 1600 1200 800 400 0 CRES COES CIES f = 1MHz VGE = 0V ICE = 10A, TJ = 25 C o CAPACITANCE (pF) VCE = 6V 0 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 30 0 5 10 15 20 25 Qg, GATE CHARGE(nC) 30 35 Figure 15. Capacitance vs. Collector to Emitter Voltage BVCER, BREAKDOWN VOLTAGE (V) Figure 16. Gate Charge 415 ICER = 10mA TJ = -40 C o 410 405 TJ = 25 C TJ = 175 C o o 400 395 10 100 RG, SERIES GATE RESISTANCE () 1000 6000 Figure 17. Break down Voltage vs. Series Gate Resistance FGB3040CS Rev. A 5 www.fairchildsemi.com FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT Typical Performance Curves 2 1 NORMALIZED THERMAL IMPEDANCE, ZJC DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC SINGLE PULSE 1E-3 -5 10 10 -4 10 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 -1 10 0 10 1 Figure 18. IGBT Normalized Transient Thermal Impedance, Junction to Case FGB3040CS Rev. A 6 www.fairchildsemi.com FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT Test Circuit and Waveforms BVCER FGB3040CS Rev. A 7 www.fairchildsemi.com FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT FGB3040CS Rev. A 8 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM (R) EcoSPARK FACT Quiet SeriesTM (R) FACT (R) FAST FastvCoreTM FPSTM (R) FRFET SM Global Power Resource Green FPSTM (R) Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM Motion-SPMTM (R) OPTOLOGIC (R) OPTOPLANAR PDP-SPMTM (R) Power220 (R) Power247 POWEREDGE Power-SPMTM (R) PowerTrench Programmable Active DroopTM (R) QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM (R) SPM STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 (R) SuperSOTTM-8 SyncFETTM (R) The Power Franchise TM TinyBoostTM TinyBuckTM (R) TinyLogic TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM (R) UHC UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I29 No Identification Needed Full Production Obsolete Not In Production (c) 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com |
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